Although preliminary reports suggested that the metalmos 2 interface forms ohmic contacts with high work function metals 6,9,10, careful analysis confirmed the presence of a conspicuous schottky barrier 11. A low forward drop high voltage trench mos barrier schottky rectifier with linearly graded doping profile, mahalingam et al. One of key issues associated with diodes having a low schottky barrier height and a planar structure is an excessively high leakage current. The figures show that the configuration of diode substantially affect the character of the resulting electric field distribution in the. Tmbs, trench mos barrier schottky rectifiers address weaknesses of traditional planar schottky devices application note.
Tmbs offers several advantages over planar schottky rectifiers. A schottky diode is the preferred rectifier in low voltage, high current applications. A new rectifier structure, called trench mos barrier schottky tmbs rectifier, is proposed and demonstrated by modeling and fabrication to have excellent characteristics. Chemical bonding and fermi level pinning at metalsemiconductor interfaces. Schottky barrier formation and band bending revealed by. Electrically tunable and negative schottky barriers in. Eg schottky barrier height rs series resistance cjo zero bias depletion capacitance vj builtin potential m grading coe.
The formation of a schottky barrier at the metalsemiconductor interface is widely utilised in semiconductor devices. This tutorial, provided by digikey and vishaygeneral semiconductor, will first explore the benefits of the trench mos barrier schottky. The 4hsic tmbs diode with improved trench profiles shows a breakdown voltage over 725v. High density trench fet with integrated schottky diode and. Schottky barrier height dependence on the metal work. Trench mos barrier schottky rectifier with a planar surface using cmp techniques us8432000b2 en 20100618. A 4hsic tmbs diode with improved trench corners has been demonstrated.
With the emerging of novel schottky barrier based nanoelectronics, a further. The catswhisker detectors used in the early days of wireless and metal rectifiers used in early power. High barrier ultra low vf trench mos power schottky rectifiers low power loss, high efficiency. Highvoltage trench mos barrier schottky rectifier ultra low vf 0. As a result the schottky barrier diode is used in a varity of applications from rf design to power. The trench profiles are improved by using 12sccm28sccm of sf6ar mixture, and a working pressure of 12 mtorr for rie etching.
The schottky diode named after the german physicist walter h. Dual high voltage trench mos barrier schottky rectifier. In another embodiment of the present invention, a method of making self aligned trench mosfet with integrated schottky diode described above can be incorporated into methods of forming shield gate trench mos devices, examples of which are disclosed, e. Schottky barrier heights for au and pd contacts to mos 2. An improvement of trench profile of 4hsic trench mos.
Vishay general semiconductor application note revision. Twodimensional numerical simulations have demonstrated coupling between the charge in the n. Trench mosbarrier schottky how is trench mosbarrier. Dual highvoltage trench mos barrier schottky rectifier ultra low vf 0. Pdf first demonstration of ga 2 o 3 trench mostype. Trench mos schottky barrier rectifier description the utc tgbr5v100 is a trench mos schottky barrier rectifier, it uses utcs advanced technology to provide customers with low forward voltage drop and high switching speed, etc. Dual high voltage trench mos barrier schottky rectifier ultra low vf 0. In this work we focus on engineering metalmos 2 interface to control variability and eliminate schottky nature of contacts. It has a low forward voltage drop and a very fast switching action. The depth of microtrenching has been reduced to lower than 0. This paper presents three different structures of schottky diodes that were fabricated with low schottky barrier heights.
High barrier ultra low vf trench mos power schottky. Sd103a sd103c schottky barrier diode do35 low forward voltage drop guard ring construction for transient protection low reverse recovery time low reverse capacitance created date. The resulting electric field distribution in a trapezoid mesa trench mos barrier schottky rectifier tmtmbs and a regular trench mos barrier schottky rectifier tmbs is shown in fig. Malvern, pamarketwire 012011 vishay intertechnology, inc. Surface states engineering of metalmos2 contacts using. V60100p dual highvoltage trench mos barrier schottky rectifier components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Trenches are formed in the surface of the semiconductor body and regions of a conductivity type opposite to the conductivity type of the body are formed along the sidewalls and bottoms of the trenches, the regions forming pn junctions with the rest of the body. Additional electric field in real trench mos barrier.
As operating voltage moves to 45v and above, planar schottky. Trench mos barrier schottky rectifier with a planar surface using cmp techniques us8772868b2 en 20110427. To reduce the forward voltage drop, the introduction of a lower schttoky barrier is necessary. Dual trench mos barrier schottky rectifier ultra low vf 0. The main requirement for a schottky rectifier used as oring diode is the low forward voltage drop. Highvoltage trench mos barrier schottky rectifier ultra low v f 0. As in the case of the jbs and tsbs rectifier structures, the depth of the mos structure used to form the potential barrier is small when compared with the total drift region thickness.
Electrical characterisation and modelling of schottky. Increased efficiency and improved reliability in oring. The schottky diode or schottky barrier diode is used in a variety of circuits. Schottky uses a bipolar process to create a superior two terminal device that has a lower forward voltage v f than comparable schottky diodes while possessing the th erm a ls b iynd g ch ar t ei sofpn p x l d. Trench mos barrier schottky rectifier ultra low vf 0.
The substrate used was an ntype lightly doped epitaxial silicon wafer on a highly. High barrier low vf trench mos power schottky rectifiers. Dual highvoltage trench mos barrier schottky rectifier. Features very low forward voltage drop high switching speed symbol do201ad 1 2 ordering information. Electrical characterisation and modelling of schottky barrier metal sourcedrain mosfets by dominic pearman thesis submitted to the university of warwick in partial ful. Pdf high voltage graphene nanowall trench mos barrier. In the case of the metalmos 2 interface, there is a scalable schottky barrier height sbh that restricts carrier injection when a very lowworkfunction metal, such as scandium, is used.
Control of schottky barriers in single layer mos 2 transistors with ferromagnetic contacts. Although it was ine of the first types of diode ever made, the schottky diode is widely sued because it is able to provide a very low forward voltage drop. This device structure is referred to as the trenchmosbarrier controlled schottky tmbs rectifier structure 1. Dual highvoltage trench mos barrier schottky rectifier ultra low v f 0. A schottky rectifier includes a rectifying interface between a semiconductor body and a metal layer.
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